htt p://www.sanken - ele.co.jp fmw - 4304 dec . 20 11 schottky barrier rectifier the information included herein is believed to be accurate and reliable. however, sanken electric co., ltd assumes no responsibility for its use ; nor for any inf ringements of patents or other rights of third parties that may result from its use. copy right: sanken electric co.,ltd . page 1 sanken electric general description fmw - 4 3 0 4 is a schottky barrier diode, and has achieved low leakage current and low vf by selecting the best barrier metal. package to - 3pf applications - dc - dc converters - ac adapter - high frequency rectification circuit key specifications item unit rating conditions v rm v 4 0 v f v 0. 55 i f = 15 a i f(av) a 30 features - super - high s peed & low noise switching. - low forward voltage drop. typical c haracteristics 0.01 0.1 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 if [a] vf [v] vf - if characteristics tj=25 tj=100 tj=150 1.0e - 06 1.0e - 05 1.0e - 04 1.0e - 03 1.0e - 02 1.0e - 01 1.0e+00 0 5 10 15 20 25 30 35 40 45 ir [a] vr [v] vr - ir characteristics tj=25 tj=100 tj=150
htt p://www.sanken - ele.co.jp fmw - 4304 dec . 20 11 schottky barrier rectifier the information included herein is believed to be accurate and reliable. however, sanken electric co., ltd assumes no responsibility for its use ; nor for any inf ringements of patents or other rights of third parties that may result from its use. copy right: sanken electric co.,ltd . page 2 sanken electric ? absolute maximum ratings no. item symbol unit rating conditions 1 transient peak reverse voltage v rsm v 4 0 2 peak reverse vo ltage v rm v 4 0 3 average forward current i f(av) a 30 refer to derating of page. 3 4 peak surge forward current i fsm a 150 10msec. half sinewave, one shot 5 i 2 t limiting value i 2 t a 2 s 112.5 1msec < t < 10msec 6 junction temperature t j c - 40 to +1 5 0 7 storage temperature t stg c - 40 to +1 90 no.1,2,4&5 show ratings per one chip ? electrical characteristics (ta=25 no. item symbol unit value conditions 1 forward voltage drop v f v 0.55 max. i f =15 a 2 reverse leakage current i r m a 1.5 max. v r =v rm 3 reverse leakage current under high temperature h ? i r ma 50 0 max. v r =v rm , t j =150 4 thermal resistance r th(j - f ) /w 2.0 max. between junction and case no.1,2,&3 show characteristics per one chip.
htt p://www.sanken - ele.co.jp fmw - 4304 dec . 20 11 schottky barrier rectifier copy right: sanken electric co.,ltd . page 3 sanken electric ? c haracteristics ? derating tj= 150 dc sinewave t/t=1/2 t/t=1/ 3 t/t=1/ 6 case temperature ( ) average forward current (a) v r =40(v) reverse voltage (v) reverse power dissipation (w) tj= 150 1 t/t=5/6 1 t/t=2/3 1 t/t=1/2 sinewave average forward current (a) forward power dissipation (w) dc t/t= 1/2 t/t=1/3,sinewave t/t=1/6 tj= 150 0 5 10 15 20 25 30 0 50 100 150 t c - i f(av) t t 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 v r - p r 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 p f - i f(av)
htt p://www.sanken - ele.co.jp fmw - 4304 dec . 20 11 schottky barrier rectifier copy right: sanken electric co.,ltd . page 4 sanken electric ? package information , mm ? connection diagram
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